公开(公告)号：US09299847B2

公开(公告)日：2016-03-29

申请号：US14741169

申请日：2015-06-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Qinghuang Lin ,  Minhua Lu ,  Robert L. Wisnieff

IPC: H01L23/48 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L23/532 ,  H01L21/283 ,  H01L51/00

CPC classification number: H01L29/78633 ,  H01L21/283 ,  H01L23/532 ,  H01L23/5329 ,  H01L27/1292 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/7869 ,  H01L51/0004 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for fabricating a thin film transistor includes printing source, drain and channel regions on a passivated transparent substrate, forming a gate dielectric over the channel region and forming a gate conductor over the gate dielectric. A permanent antireflective coating is deposited over the source region, drain region and gate electrode, and an interlevel dielectric layer is formed over the permanent antireflective coating. Openings in the permanent antireflective coating and the interlevel dielectric layer are formed to provide contact holes to the source region, drain region and gate electrode. A conductor is deposited in the contact holes to electrically connect to the source region, drain region and gate electrode. Thin film transistor devices and other methods are also disclosed.

公开(公告)号：US09343354B2

公开(公告)日：2016-05-17

申请号：US13970124

申请日：2013-08-19

Applicant: GLOBALFOUNDRIES INC.

Inventor： Qinghuang Lin ,  Ying Zhang

IPC: H01L21/4763 ,  H01L21/44 ,  H01L21/768 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/283

CPC classification number: H01L21/76808 ,  H01L21/0272 ,  H01L21/0276 ,  H01L21/283 ,  H01L21/31058 ,  H01L21/311 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76816 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76895 ,  H01L21/76897 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A contact structure includes a permanent antireflection coating formed on a substrate having contact pads. A patterned dielectric layer is formed on the antireflective coating. The patterned dielectric layer and the permanent antireflective coating form openings. The openings correspond with locations of the contact pads. Contact structures are formed in the openings to make electrical contact with the contacts pads such that the patterned dielectric layer and the permanent antireflective coating each have a conductively filled region forming the contact structures.

Abstract translation: 接触结构包括在具有接触垫的基板上形成的永久性抗反射涂层。 在抗反射涂层上形成图案化的介电层。 图案化电介质层和永久性抗反射涂层形成开口。 开口对应于接触垫的位置。 在开口中形成接触结构以与接触垫电接触，使得图案化电介质层和永久性抗反射涂层各自具有形成接触结构的导电填充区域。

公开(公告)号：US09245791B2

公开(公告)日：2016-01-26

申请号：US14754190

申请日：2015-06-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Qinghuang Lin ,  Ying Zhang

IPC: H01L21/283 ,  H01L21/4763 ,  H01L21/768 ,  H01L21/027

CPC classification number: H01L21/76808 ,  H01L21/0272 ,  H01L21/0276 ,  H01L21/283 ,  H01L21/31058 ,  H01L21/311 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76816 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76895 ,  H01L21/76897 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A contact structure includes a permanent antireflection coating formed on a substrate having contact pads. A patterned dielectric layer is formed on the antireflective coating. The patterned dielectric layer and the permanent antireflective coating form openings. The openings correspond with locations of the contact pads. Contact structures are formed in the openings to make electrical contact with the contacts pads such that the patterned dielectric layer and the permanent antireflective coating each have a conductively filled region forming the contact structures.

Abstract translation: 接触结构包括在具有接触垫的基板上形成的永久性抗反射涂层。 在抗反射涂层上形成图案化的介电层。 图案化电介质层和永久性抗反射涂层形成开口。 开口对应于接触垫的位置。 在开口中形成接触结构以与接触垫电接触，使得图案化电介质层和永久性抗反射涂层各自具有形成接触结构的导电填充区域。

公开(公告)号：US09490202B2

公开(公告)日：2016-11-08

申请号：US14505087

申请日：2014-10-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： Qinghuang Lin ,  Benjamin L. Fletcher ,  Cyril Cabral

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/00 ,  H01L23/522 ,  H01L23/482 ,  H01L23/528 ,  H01L23/00 ,  H01L21/311 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/5222 ,  H01L21/31127 ,  H01L21/7682 ,  H01L21/76885 ,  H01L23/4821 ,  H01L23/528 ,  H01L23/53295 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Devices and methods for forming a self-aligned airgap interconnect structure includes etching a conductive layer to a substrate to form conductive structures with patterned gaps and filling the gaps with a sacrificial material. The sacrificial material is planarized to expose a top surface of the conductive layer. A permeable cap layer is deposited over the conductive structure and the sacrificial material, Self-aligned airgaps are formed by removing the sacrificial material through the permeable layer.

Abstract translation: 用于形成自对准气隙互连结构的装置和方法包括将导电层蚀刻到衬底以形成具有图案化间隙的导电结构并用牺牲材料填充间隙。 将牺牲材料平坦化以暴露导电层的顶表面。 在导电结构和牺牲材料上沉积可渗透盖层，通过可渗透层去除牺牲材料形成自对准气囊。