Invention Grant
- Patent Title: Method for postdoping a semiconductor wafer
- Patent Title (中): 后掺杂半导体晶片的方法
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Application No.: US14454741Application Date: 2014-08-08
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Publication No.: US09245811B2Publication Date: 2016-01-26
- Inventor: Reinhard Ploss , Helmut Oefner , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Eschweiler & Associates, LLC
- Priority: DE102013216195 20130814
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L21/66 ; H01L21/265 ; H01L21/324 ; H01L21/261 ; H01L21/263 ; H01L29/36 ; H01L29/66
Abstract:
A method for treating a semiconductor wafer having a basic doping is disclosed. The method includes determining a doping concentration of the basic doping, and adapting the basic doping of the semiconductor wafer by postdoping. The postdoping includes at least one of the following methods: a proton implantation and a subsequent thermal process for producing hydrogen induced donors, and a neutron irradiation. In this case, at least one of the following parameters is dependent on the determined doping concentration of the basic doping: an implantation dose of the proton implantation, a temperature of the thermal process, and an irradiation dose of the neutron irradiation.
Public/Granted literature
- US20150050754A1 METHOD FOR POSTDOPING A SEMICONDUCTOR WAFER Public/Granted day:2015-02-19
Information query
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