发明授权
- 专利标题： Semiconductor device and fabricating process for the same
- 专利标题（中）： 半导体器件及其制造工艺相同
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申请号： US13553535申请日： 2012-07-19
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公开(公告)号： US09245841B2公开(公告)日： 2016-01-26
- 发明人: Chien-Hua Huang , Chung-Ju Lee , Tsung-Min Huang
- 申请人： Chien-Hua Huang , Chung-Ju Lee , Tsung-Min Huang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L35/24 ; H01L51/00 ; H01L23/522 ; H01L23/532 ; H01L21/768
摘要：
A semiconductor device and a fabricating process for the same are provided. The semiconductor device includes a base layer having a part of a reactive material; and a self-assembled protecting layer of a self-assembled molecule reacting with the reactive material formed over the part.
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