Invention Grant
- Patent Title: Reverse polarity protection for n-substrate high-side switches
- Patent Title (中): n基板高边开关的反极性保护
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Application No.: US13631924Application Date: 2012-09-29
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Publication No.: US09245888B2Publication Date: 2016-01-26
- Inventor: Luca Petruzzi , Bernhard Auer , Paolo Del Croce , Markus Ladurner
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/092 ; H01L27/02 ; H03K17/0814 ; H01L29/423

Abstract:
A semiconductor device is disclosed. In accordance with a first aspect of the present invention the device includes a semiconductor chip having a substrate, a first supply terminal electrically coupled to the substrate to provide a first supply potential (VS) and a load current to the substrate, and a second supply terminal operably provided with a second supply potential. A first vertical transistor is integrated in the semiconductor chip and electrically coupled between the supply terminal and an output terminal. The first vertical transistor is configured to provide a current path for the load current to the output terminal in accordance with a control signal, which is provided to a gate electrode of the first vertical transistor.
Public/Granted literature
- US20140091384A1 Reverse Polarity Protection for n-Substrate High-Side Switches Public/Granted day:2014-04-03
Information query
IPC分类: