Invention Grant
- Patent Title: Semiconductor device having high mobility channel
- Patent Title (中): 具有高移动性通道的半导体器件
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Application No.: US14040366Application Date: 2013-09-27
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Publication No.: US09245971B2Publication Date: 2016-01-26
- Inventor: Bin Yang , P R Chidambaram , John Jianhong Zhu , Jihong Choi , Da Yang , Ravi Mahendra Todi , Giridhar Nallapati , Chock Hing Gan , Ming Cai , Samit Sengupta
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/778 ; H01L21/8238
Abstract:
In a particular embodiment, a semiconductor device includes a high mobility channel between a source region and a drain region. The high mobility channel extends substantially a length of a gate. The semiconductor device also includes a doped region extending from the source region or the drain region toward the high mobility channel. A portion of a substrate is positioned between the doped region and the high mobility channel.
Public/Granted literature
- US20150091060A1 SEMICONDUCTOR DEVICE HAVING HIGH MOBILITY CHANNEL Public/Granted day:2015-04-02
Information query
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