Invention Grant
- Patent Title: High voltage multiple channel LDMOS
- Patent Title (中): 高压多通道LDMOS
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Application No.: US14578710Application Date: 2014-12-22
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Publication No.: US09245998B2Publication Date: 2016-01-26
- Inventor: Yongxi Zhang , Sameer P. Pendharkar
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/76 ; H01L21/336 ; H01L27/092 ; H01L29/66 ; H01L21/8238
Abstract:
An integrated circuit and method having an LDMOS transistor with multiple current channels. A first current channel is above a buried p-type diffusion and a second one current channel is below the buried p-type diffusion.
Public/Granted literature
- US20150187934A1 HIGH VOLTAGE MULTIPLE CHANNEL LDMOS Public/Granted day:2015-07-02
Information query
IPC分类:
