Invention Grant
- Patent Title: Light emitting device having light extraction structure and method for manufacturing the same
- Patent Title (中): 具有光提取结构的发光器件及其制造方法
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Application No.: US14151613Application Date: 2014-01-09
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Publication No.: US09246054B2Publication Date: 2016-01-26
- Inventor: Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
- Applicant: LG INNOTEK CO., LTD. , LG ELECTRONICS INC.
- Applicant Address: KR Seoul KR Seoul
- Assignee: LG INNOTEK CO., LTD.,LG ELECTRONICS INC.
- Current Assignee: LG INNOTEK CO., LTD.,LG ELECTRONICS INC.
- Current Assignee Address: KR Seoul KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2006-0041006 20060508; KR10-2007-0037414 20070417; KR10-2007-0037415 20070417; KR10-2007-0037416 20070417
- Main IPC: H01L33/24
- IPC: H01L33/24 ; H01L33/46 ; H01L33/48 ; H01L33/60 ; H01L33/62 ; H01L33/20 ; H01L33/40 ; H01L33/00 ; H01L33/22 ; H01L33/42 ; H01L33/44
Abstract:
A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
Public/Granted literature
- US20140124814A1 LIGHT EMITTING DEVICE HAVING LIGHT EXTRACTION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-05-08
Information query
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