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Patent Agency Ranking
1.发明授权公开(公告)号：US09246054B2
公开(公告)日：2016-01-26
申请号：US14151613
申请日：2014-01-09
Applicant: LG INNOTEK CO., LTD. , LG ELECTRONICS INC.
Inventor： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
IPC: H01L33/24 , H01L33/46 , H01L33/48 , H01L33/60 , H01L33/62 , H01L33/20 , H01L33/40 , H01L33/00 , H01L33/22 , H01L33/42 , H01L33/44
CPC classification number: H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/48 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0033 , H01L2933/0083 , Y10S438/977 , H01L2924/00014 , H01L2924/00
Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
Abstract translation: 公开了一种能够实现发光效率提高和可靠性提高的氮化物系发光器件。 发光器件包括半导体层和布置在半导体层上并由折射率等于或高于半导体层的反射率的材料制成的光提取层。
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2.发明授权公开(公告)号：US09837578B2
公开(公告)日：2017-12-05
申请号：US14974991
申请日：2015-12-18
Applicant: LG INNOTEK CO., LTD. , LG ELECTRONICS INC.
Inventor： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
IPC: H01L33/20 , H01L33/40 , H01L33/42 , H01L33/48 , H01L33/62 , H01L33/60 , H01L33/00 , H01L33/22 , H01L33/44
CPC classification number: H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/48 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0033 , H01L2933/0083 , Y10S438/977 , H01L2924/00014 , H01L2924/00
Abstract: A light emitting device including a support layer; a reflective electrode disposed on the support layer; an ohmic electrode disposed on the reflective electrode, the ohmic electrode including a transparent electrode; and a semiconductor structure disposed on the ohmic electrode, the semiconductor structure including a p-type semiconductor layer disposed on the ohmic electrode; a light emitting layer disposed on the p-type semiconductor layer; and an n-type semiconductor layer disposed on the light emitting layer. Further, the transparent electrode has a thickness in the range of 40 nm to 90 nm.
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公开(公告)号：US08710535B2
公开(公告)日：2014-04-29
申请号：US13862267
申请日：2013-04-12
Applicant: LG Innotek Co. Ltd.
Inventor： Kyoung Woo Jo , Sun Kyung Kim , Woon Kyung Choi
IPC: H01L33/58
CPC classification number: H01L33/58 , H01L33/0095 , H01L33/405 , H01L33/44 , H01L33/50 , H01L33/508 , H01L2224/48091 , H01L2924/01055 , H01L2924/01068 , H01L2924/01322 , H01L2924/12032 , H01L2933/0083 , H01L2924/00014 , H01L2924/00
Abstract: Disclosed are a light emitting device, a method of manufacturing the same and a light emitting device package. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a fluorescent layer on the light emitting structure; and a light extracting structure on the fluorescent layer. The light extracting structure extracts light, which is generated in the light emitting structure and incident into an interfacial surface between the fluorescent layer and the light extracting structure, to an outside of the light emitting structure.
Abstract translation: 公开了发光器件，其制造方法和发光器件封装。 本实施例的发光器件包括发光结构，其包括第一导电半导体层，第二导电半导体层和在第一和第二导电半导体层之间的有源层; 在发光结构上的荧光层; 以及荧光层上的光提取结构。 光提取结构提取在发光结构中产生并入射到荧光层和光提取结构之间的界面中的光到发光结构的外部。
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公开(公告)号：US09391248B2
公开(公告)日：2016-07-12
申请号：US14517660
申请日：2014-10-17
Applicant: LG INNOTEK CO., LTD.
Inventor： Sun Kyung Kim
CPC classification number: H01L33/58 , H01L33/20 , H01L33/387 , H01L33/42 , H01L33/46 , H01L33/50 , H01L2224/48091 , H01L2924/12032 , H01L2933/0083 , H01L2924/00014 , H01L2924/00
Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and a light extraction pattern in which a period (a) exceeds λ/n (where, λ is a wavelength of light emitted from the active layer, and n is a refractive index of the light emitting structure) on the light emitting structure. The period (a) may be in the range of 5×(λ/n)
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公开(公告)号：US08890182B2
公开(公告)日：2014-11-18
申请号：US13935298
申请日：2013-07-03
Applicant: LG Innotek Co., Ltd.
Inventor： Sun Kyung Kim
IPC: H01L29/205 , H01L33/58 , H01L33/20 , H01L33/38
CPC classification number: H01L33/58 , H01L33/20 , H01L33/387 , H01L33/42 , H01L33/46 , H01L33/50 , H01L2224/48091 , H01L2924/12032 , H01L2933/0083 , H01L2924/00014 , H01L2924/00
Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and a light extraction pattern in which a period (a) exceeds λ/n (where, λ is a wavelength of light emitted from the active layer, and n is a refractive index of the light emitting structure) on the light emitting structure. The period (a) may be in the range of 5×(λ/n) a 15×(λ/n). An etching depth (h) of the light extraction pattern may be equal to or greater than λ/n.
Abstract translation: 提供了一种发光器件，发光器件封装和照明系统。 发光器件包括在第一导电类型半导体层和第二导电类型半导体层之间包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光结构以及光提取图案，其中， 周期（a）超过λ/ n（其中，λ是从有源层发射的光的波长，n是发光结构的折射率）。 周期（a）可以在5×（λ/ n）a 15×（λ/ n）的范围内。 光提取图案的蚀刻深度（h）可以等于或大于λ/ n。
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