A method of manufacturing a cover structure is provided. A metal substrate disposed on a carrier is provided. The carrier has a surface, and the metal substrate has a plurality of openings exposing a portion of the surface. A first metal layer is formed on the metal substrate and is conformal with the metal substrate. The first metal layer covers the portion of the surface exposed by the openings. An insulating layer and a second metal layer located on the insulating layer are laminated on the metal substrate. The insulating layer is located between the first metal layer and the second metal layer to cover the first metal layer and fill the openings. The metal substrate and the carrier are removed to expose the first metal layer and define a plurality of cavity regions and a plurality of connecting regions connected with the cavity regions.