Invention Grant
- Patent Title: Substrate, method of fabricating the same, and application the same
- Patent Title (中): 基板，制造方法及其应用
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Application No.: US14472391Application Date: 2014-08-29
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Publication No.: US09252079B2Publication Date: 2016-02-02
- Inventor: Yao-Jun Tsai , Chen-Peng Hsu , Shih-Yi Wen , Chi-Chin Yang , Hung-Lieh Hu
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/00 ; H01L23/48 ; H01L21/306 ; H01L27/02 ; H01L33/20 ; H01L33/62 ; H01L21/768 ; H01L23/00 ; H01S5/02 ; H01S5/024 ; H01S5/026 ; H01S5/34 ; G02B6/12 ; G02B6/34 ; H01L29/861 ; H01L23/60 ; H01L25/16
Abstract:
Provided is a substrate, including a substrate material, two conductive structures, and at least one diode. The two conductive structures extend from a first surface of the substrate material to a second surface of the substrate material via two through holes penetrating through the substrate material. The at least one diode is embedded in the substrate material at a sidewall of one of the through holes.
Public/Granted literature
- US20150061084A1 SUBSTRATE, METHOD OF FABRICATING THE SAME, AND APPLICATION THE SAME Public/Granted day:2015-03-05
Information query
IPC分类:
