Invention Grant
- Patent Title: Method for handling very thin device wafers
- Patent Title (中): 处理非常薄的器件晶圆的方法
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Application No.: US14625579Application Date: 2015-02-18
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Publication No.: US09252111B2Publication Date: 2016-02-02
- Inventor: Kevin J. Lee
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/538 ; H01L25/065 ; H01L21/768 ; H01L21/683
Abstract:
A structure and method of handling a device wafer during through-silicon via (TSV) processing are described in which a device wafer is bonded to a temporary support substrate with a permanent thermosetting material. Upon removal of the temporary support substrate a planar frontside bonding surface including a reflowed solder bump and the permanent thermosetting material is exposed.
Public/Granted literature
- US20150162290A1 METHOD FOR HANDLING VERY THIN DEVICE WAFERS Public/Granted day:2015-06-11
Information query
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