Invention Grant
US09252133B2 Electrical leakage reduction in stacked integrated circuits having through-silicon-via (TSV) structures
有权
具有通硅通孔（TSV）结构的堆叠集成电路中的漏电减少
- Patent Title: Electrical leakage reduction in stacked integrated circuits having through-silicon-via (TSV) structures
- Patent Title (中): 具有通硅通孔（TSV）结构的堆叠集成电路中的漏电减少
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Application No.: US14487439Application Date: 2014-09-16
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Publication No.: US09252133B2Publication Date: 2016-02-02
- Inventor: Christopher N. Collins , Mukta G. Farooq , Troy L. Graves-Abe , Joyce C. Liu , Gerd Pfeiffer , Thuy L. Tran-Quinn
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti, P.C.
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/065 ; H01L29/32 ; H01L21/768 ; H01L23/538
Abstract:
The formation of TSVs (through substrate vias) for 3D applications has proven to be defect dependent upon the type of starting semiconductor substrate employed. In addition to the initial formation of TSVs via Bosch processing, backside 3D wafer processing has also shown a defect dependency on substrate type. High yield of TSV formation can be achieved by utilizing a substrate that embodies bulk micro defects (BMD) at a density between 1e4/cc (particles per cubic centimeter) and 1e7/cc and having equivalent diameter less than 55 nm (nanometers).
Public/Granted literature
- US20150004749A1 ELECTRICAL LEAKAGE REDUCTION IN STACKED INTEGRATED CIRCUITS HAVING THROUGH-SILICON-VIA (TSV) STRUCTURES Public/Granted day:2015-01-01
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