发明授权
- 专利标题： Device including active floating gate region area that is smaller than channel area
- 专利标题（中）： 器件包括有源浮栅区域小于通道面积
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申请号： US14375695申请日： 2012-04-30
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公开(公告)号： US09252149B2公开(公告)日： 2016-02-02
- 发明人: Ning Ge , Adam L. Ghozeil , Chaw Sing Ho , Trudy Benjamin
- 申请人： Ning Ge , Adam L. Ghozeil , Chaw Sing Ho , Trudy Benjamin
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 代理机构： Dicke, Billig & Czaja, PLLC (PAT)
- 国际申请： PCT/US2012/035892 WO 20120430
- 国际公布： WO2013/165375 WO 20131107
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; H01L29/788 ; G11C16/04 ; H01L21/28 ; H01L21/288 ; H01L21/3213 ; H01L29/10 ; H01L29/423 ; H01L29/66
摘要：
A device including a drain, a channel, a floating gate, and a control gate. The channel surrounds the drain and has a channel area. The floating gate includes an active floating gate region that has an active floating gate region area. The control gate is coupled to the active floating gate region via a control capacitance, wherein the active floating gate region area is smaller than the channel area.
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