Invention Grant
- Patent Title: Memory device and method for manufacturing the same
- Patent Title (中): 存储器件及其制造方法
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Application No.: US14309923Application Date: 2014-06-20
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Publication No.: US09252155B2Publication Date: 2016-02-02
- Inventor: Tzu-Hsuan Hsu , Wei-Chen Chen , Hang-Ting Lue
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L27/115 ; H01L23/532 ; H01L23/528 ; H01L21/768 ; H01L21/225 ; H01L21/285
Abstract:
A semiconductor structure and a method for manufacturing the same are disclosed. The semiconductor structure includes a first electrode layer, a second electrode layer and a dielectric layer between the first electrode layer and the second electrode layer. A width of the second electrode layer becomes larger in a direction away from the dielectric layer.
Public/Granted literature
- US20150372001A1 MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2015-12-24
Information query
IPC分类:
