Invention Grant
- Patent Title: Semiconductor structure with deep trench thermal conduction
- Patent Title (中): 具有深沟槽热传导的半导体结构
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Application No.: US13849694Application Date: 2013-03-25
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Publication No.: US09252242B2Publication Date: 2016-02-02
- Inventor: Theodorus Eduardus Standaert , Kangguo Cheng , Junjun Li , Balasubramanian Pranatharthi Haran , Shom Ponoth , Tenko Yamashita
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Steven J. Meyers; Matthew C. Zehrer; Howard M. Cohn
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/861 ; H01L29/40 ; H01L29/423 ; H01L27/02 ; H01L23/367 ; H01L23/373 ; H01L29/06 ; H01L27/12
Abstract:
Diodes and resistors for integrated circuits are provided. Deep trenches (DTs) are integrated into the diodes and resistors for the purposes of thermal conduction. The deep trenches facilitate conduction of heat from a semiconductor-on-insulator substrate to a bulk substrate. Semiconductor fins may be formed to align with the deep trenches.
Public/Granted literature
- US20140284717A1 SEMICONDUCTOR STRUCTURE WITH DEEP TRENCH THERMAL CONDUCTION Public/Granted day:2014-09-25
Information query
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