Invention Grant
US09252244B2 Methods of selectively growing source/drain regions of fin field effect transistor and method of manufacturing semiconductor device including a fin field effect transistor 有权
选择性地增长鳍状场效应晶体管的源极/漏极区域的方法及制造包括鳍状场效应晶体管的半导体器件的方法

Methods of selectively growing source/drain regions of fin field effect transistor and method of manufacturing semiconductor device including a fin field effect transistor
Abstract:
The inventive concepts provide methods of manufacturing a semiconductor device. The method includes patterning a substrate to form an active pattern, forming a gate pattern intersecting the active pattern, forming a gate spacer on a sidewall of the gate pattern, forming a growth-inhibiting layer covering an upper region of the gate pattern, and forming source/drain electrodes at opposite first and second sides of the gate pattern.
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