发明授权
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US14284733申请日： 2014-05-22
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公开(公告)号： US09252286B2公开(公告)日： 2016-02-02
- 发明人: Atsuo Isobe , Yutaka Okazaki , Kazuya Hanaoka , Shinya Sasagawa , Motomu Kurata
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office
- 代理商 Eric J. Robinson
- 优先权： JP2011-282450 20111223
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/78 ; H01L29/66 ; H01L27/12 ; H01L27/108 ; H01L27/11
摘要：
A first conductive film overlapping with an oxide semiconductor film is formed over a gate insulating film, a gate electrode is formed by selectively etching the first conductive film using a resist subjected to electron beam exposure, a first insulating film is formed over the gate insulating film and the gate electrode, removing a part of the first insulating film while the gate electrode is not exposed, an anti-reflective film is formed over the first insulating film, the anti-reflective film, the first insulating film and the gate insulating film are selectively etched using a resist subjected to electron beam exposure, and a source electrode in contact with one end of the oxide semiconductor film and one end of the first insulating film and a drain electrode in contact with the other end of the oxide semiconductor film and the other end of the first insulating film are formed.
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