Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14487762Application Date: 2014-09-16
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Publication No.: US09257400B2Publication Date: 2016-02-09
- Inventor: Shinichi Uchida , Kenji Nishikawa , Masato Kanno , Mika Yonezawa , Shunichi Kaeriyama , Toshinori Kiyohara
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Sughrue Mion, PLLC
- Priority: JP2013-198300 20130925
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00 ; H01L23/495 ; H01L23/522 ; H01L29/06 ; H01L23/31
Abstract:
A semiconductor device has a chip mounting part, a first semiconductor chip, and a second semiconductor chip. The first semiconductor chip is mounted over the chip mounting part in a direction in which its first principal plane faces the chip mounting part. A part of the second semiconductor chip is mounted over the chip mounting part in a direction in which its third principal plane faces the first semiconductor chip. The element mounting part has a notch part. A part of the second semiconductor chip overlaps the notch part. In a region of the third principal plane of the second semiconductor chip that overlaps the notch part, a second electrode pad is provided.
Public/Granted literature
- US20150084209A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-03-26
Information query
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