发明授权
- 专利标题: Electronic devices and method of fabricating the same
- 专利标题(中): 电子器件及其制造方法
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申请号: US13952904申请日: 2013-07-29
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公开(公告)号: US09257579B2公开(公告)日: 2016-02-09
- 发明人: Sun Jin Yun , Chang Bong Yeon , Yoo Jeong Lee , JungWook Lim
- 申请人: Electronics and Telecommunications Research Institute
- 申请人地址: KR Daejeon
- 专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人地址: KR Daejeon
- 代理机构: Rabin & Berdo, P.C.
- 优先权: KR10-2012-0083394 20120730; KR10-2013-0053136 20130510
- 主分类号: H01L31/056
- IPC分类号: H01L31/056 ; H01L31/0232 ; H01L31/18 ; H01L31/0224 ; H01L31/0236 ; H01L51/52 ; H01L33/40 ; H01L21/00
摘要:
Provided is a method of fabricating an electronic device. The method according to the present inventive concept may include forming a lower electrode having a flat portion and protrusions on a substrate, forming an intermediate layer on the lower electrode, and forming an upper electrode on the intermediate layer. The forming of the lower electrode may include forming a conductive film by depositing a first metal on the substrate, and depositing a second metal on the conductive film to prepare an alloy of the first metal and the second metal.
公开/授权文献
- US20140026963A1 ELECTRONIC DEVICES AND METHOD OF FABRICATING THE SAME 公开/授权日:2014-01-30
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