Invention Grant
US09257646B2 Methods of forming memory cells having regions containing one or both of carbon and boron
有权
形成含有碳和硼中的一种或两种的区域的记忆体的方法
- Patent Title: Methods of forming memory cells having regions containing one or both of carbon and boron
- Patent Title (中): 形成含有碳和硼中的一种或两种的区域的记忆体的方法
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Application No.: US14618936Application Date: 2015-02-10
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Publication No.: US09257646B2Publication Date: 2016-02-09
- Inventor: Martin Schubert , Shu Qin , Scott E. Sills , Durai Vishak Nirmal Ramaswamy , Allen McTeer , Yongjun Jeff Hu
- Applicant: Micron Technology, Inc.
- Applicant Address: US IA Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US IA Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L45/00
Abstract:
Some embodiments include a memory cell having a first electrode, and an intermediate material over and directly against the first electrode. The intermediate material includes stabilizing species corresponding to one or both of carbon and boron. The memory cell also has a switching material over and directly against the intermediate material, an ion reservoir material over the switching material, and a second electrode over the ion reservoir material. Some embodiments include methods of forming memory cells.
Public/Granted literature
- US20150179936A1 Memory Cells and Methods of Forming Memory Cells Public/Granted day:2015-06-25
Information query
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