Invention Grant
- Patent Title: Photosensitive material and method of photolithography
- Patent Title (中): 感光材料和光刻方法
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Application No.: US13437674Application Date: 2012-04-02
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Publication No.: US09261786B2Publication Date: 2016-02-16
- Inventor: Ching-Yu Chang
- Applicant: Ching-Yu Chang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/039 ; G03F7/20 ; G03F7/26 ; G03F7/32
Abstract:
Methods and materials directed to solubility of photosensitive material in negative tone developer are described. The photosensitive material may include greater than 50% acid labile groups as branches to a polymer chain. In another embodiment, a photosensitive material, after exposure or irradiation, is treated. Exemplary treatments include applying a base to the photosensitive material.
Public/Granted literature
- US20130260311A1 PHOTOSENSITIVE MATERIAL AND METHOD OF PHOTOLITHOGRAPHY Public/Granted day:2013-10-03
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