Invention Grant
- Patent Title: Integration of lithography apparatus and mask optimization process with multiple patterning process
- Patent Title (中): 光刻设备和掩模优化工艺与多个图案化工艺的集成
-
Application No.: US14468635Application Date: 2014-08-26
-
Publication No.: US09262579B2Publication Date: 2016-02-16
- Inventor: Luoqi Chen , Jun Ye , Hong Chen
- Applicant: ASML NETHERLANDS B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML NETHERLANDS B.V.
- Current Assignee: ASML NETHERLANDS B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G03F1/70 ; G03F7/20

Abstract:
The present invention relates to lithographic apparatuses and processes, and more particularly to multiple patterning lithography for printing target patterns beyond the limits of resolution of the lithographic apparatus. A method of splitting a pattern to be imaged onto a substrate via a lithographic process into a plurality of sub-patterns is disclosed, wherein the method comprises a splitting step being configured to be aware of requirements of a co-optimization between at least one of the sub-patterns and an optical setting of the lithography apparatus used for the lithographic process. Device characteristic optimization techniques, including intelligent pattern selection based on diffraction signature analysis, may be integrated into the multiple patterning process flow.
Public/Granted literature
- US20140365983A1 INTEGRATION OF LITHOGRAPHY APPARATUS AND MASK OPTIMIZATION PROCESS WITH MULTIPLE PATTERNING PROCESS Public/Granted day:2014-12-11
Information query