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    Correction for flare effects in lithography system
    1.
    发明授权
    Correction for flare effects in lithography system 有权

    公开(公告)号：US10423745B2

    公开(公告)日：2019-09-24

    申请号：US14537441

    申请日：2014-11-10

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Hua-Yu Liu ,  Jiangwei Li ,  Luoqi Chen ,  Wei Liu ,  Jiong Jiang

    IPC: G06F17/50 ,  G03F7/20

    Abstract: A method for reducing an effect of flare produced by a lithographic apparatus for imaging a design layout onto a substrate is described. A flare map in an exposure field of the lithographic apparatus is simulated by mathematically combining a density map of the design layout at the exposure field with a point spread function (PSF), wherein system-specific effects on the flare map may be incorporated in the simulation. Location-dependent flare corrections for the design layout are calculated by using the determined flare map, thereby reducing the effect of flare.

    Three-dimensional mask model for photolithography simulation
    2.
    发明授权
    Three-dimensional mask model for photolithography simulation 有权

    公开(公告)号：US10198549B2

    公开(公告)日：2019-02-05

    申请号：US15174732

    申请日：2016-06-06

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Peng Liu ,  Yu Cao ,  Luoqi Chen ,  Jun Ye

    IPC: G06F17/50 ,  G03F1/00 ,  G03F1/36 ,  G03F7/20

    Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

    Integration of lithography apparatus and mask optimization process with multiple patterning process
    3.
    发明授权
    Integration of lithography apparatus and mask optimization process with multiple patterning process 有权
    光刻设备和掩模优化工艺与多个图案化工艺的集成

    公开(公告)号：US09262579B2

    公开(公告)日：2016-02-16

    申请号：US14468635

    申请日：2014-08-26

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Luoqi Chen ,  Jun Ye ,  Hong Chen

    IPC: G06F17/50 ,  G03F1/70 ,  G03F7/20

    CPC classification number: G06F17/5081 ,  G03F1/70 ,  G03F7/70433 ,  G03F7/70466 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/707

    Abstract: The present invention relates to lithographic apparatuses and processes, and more particularly to multiple patterning lithography for printing target patterns beyond the limits of resolution of the lithographic apparatus. A method of splitting a pattern to be imaged onto a substrate via a lithographic process into a plurality of sub-patterns is disclosed, wherein the method comprises a splitting step being configured to be aware of requirements of a co-optimization between at least one of the sub-patterns and an optical setting of the lithography apparatus used for the lithographic process. Device characteristic optimization techniques, including intelligent pattern selection based on diffraction signature analysis, may be integrated into the multiple patterning process flow.

    Abstract translation: 本发明涉及光刻设备和工艺，更具体地涉及用于将目标图案打印超出光刻设备的分辨率限制的多重图形化光刻技术。 公开了一种通过光刻处理将待成像的图案图案分割成多个子图案的方法，其中该方法包括分割步骤，其被配置为意识到在以下过程中的至少一个之间的共优化的要求： 用于光刻工艺的光刻设备的子图案和光学设置。 包括基于衍射特征分析的智能图案选择的设备特征优化技术可以被集成到多个图案化工艺流程中。

    Fast freeform source and mask co-optimization method
    4.
    发明授权
    Fast freeform source and mask co-optimization method 有权
    快速自由源和掩码协同优化方法

    公开(公告)号：US09111062B2

    公开(公告)日：2015-08-18

    申请号：US14075917

    申请日：2013-11-08

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Luoqi Chen ,  Jun Ye ,  Yu Cao

    IPC: G06F17/50 ,  G03F1/00 ,  G03F1/36 ,  G03F7/20

    CPC classification number: G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F7/70083 ,  G03F7/70125 ,  G03F7/70441 ,  G03F7/705 ,  G06F17/5068

    Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.

    Abstract translation: 本公开涉及光刻设备和工艺，更具体地涉及用于优化用于光刻设备和工艺的照明源和掩模的工具。 根据某些方面，本公开通过允许直接计算成本函数的梯度来显着加快优化的收敛。 根据其它方面，本公开允许同时优化源和掩码，从而显着加速整体收敛。 根据另外的方面，本公开允许自由形式优化，而不需要常规优化技术所需的限制。

    Three-dimensional mask model for photolithography simulation
    5.
    发明授权
    Three-dimensional mask model for photolithography simulation 有权
    用于光刻模拟的三维掩模模型

    公开(公告)号：US08938694B2

    公开(公告)日：2015-01-20

    申请号：US14081386

    申请日：2013-11-15

    Applicant: ASML Netherlands B.V.

    Inventor： Peng Liu ,  Yu Cao ,  Luoqi Chen ,  Jun Ye

    IPC: G06F17/50 ,  G03F1/00 ,  G03F1/36 ,  G03F7/20

    CPC classification number: G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F7/705 ,  G06F17/5009

    Abstract: A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

    Abstract translation: 本发明的三维掩模模型提供了比薄膜模型具有亚波长特征的光刻掩模的三维效果更逼真的近似。 在一个实施例中，三维掩模模型包括空间域中的一组过滤内核，其被配置为与薄膜传输函数进行卷积以产生近场图像。 在另一个实施例中，三维掩模模型包括频域中的一组校正因子，其被配置为乘以薄膜传输函数的傅立叶变换以产生近场图像。

    Fast freeform source and mask co-optimization method
    7.
    发明授权
    Fast freeform source and mask co-optimization method 有权

    公开(公告)号：US10592633B2

    公开(公告)日：2020-03-17

    申请号：US15959123

    申请日：2018-04-20

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Luoqi Chen ,  Jun Ye ,  Yu Cao

    IPC: G06F17/50 ,  G03F7/20 ,  G03F1/00 ,  G03F1/36

    Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.

    OPTIMIZATION FLOWS OF SOURCE, MASK AND PROJECTION OPTICS
    10.
    发明申请
    OPTIMIZATION FLOWS OF SOURCE, MASK AND PROJECTION OPTICS 审中-公开

    公开(公告)号：US20170176864A1

    公开(公告)日：2017-06-22

    申请号：US15451328

    申请日：2017-03-06

    Applicant: ASML Netherlands B.V.

    Inventor： Duan-Fu HSU ,  Luoqi Chen ,  Hanying Feng ,  Rafael C. Howell ,  Xinjian Zhou ,  Yi-Fan Chen

    IPC: G03F7/20

    CPC classification number: G03F7/70066 ,  G03F7/705

    Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics may be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process.

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