Invention Grant
- Patent Title: Current detection circuit and semiconductor memory apparatus
- Patent Title (中): 电流检测电路和半导体存储装置
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Application No.: US14537352Application Date: 2014-11-10
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Publication No.: US09263145B2Publication Date: 2016-02-16
- Inventor: Kenichi Arakawa
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: WINBOND ELECTRONICS CORP.
- Current Assignee: WINBOND ELECTRONICS CORP.
- Current Assignee Address: TW Taichung
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: JP2014-024479 20140212
- Main IPC: G11C7/06
- IPC: G11C7/06 ; G11C16/26 ; G11C16/04 ; G11C13/00 ; G11C7/10 ; G11C11/22

Abstract:
The invention provides a current detection circuit and a semiconductor memory apparatus using the current detection circuit thereof. The current detection circuit is capable of rapidly sensing the current flowing through a tiny bit line structure. A page buffer/sensing circuit of the invention includes: a transistor TP3 pre-charging a node SNS during a pre-charge period and providing a target constant current to the node SNS during a discharge period; a transistor TN3 pre-charging the bit line according to the voltage pre-charged to the node SNS; and a transistor TP2 connected to the node SNS. The transistor TP2 detects whether or not a current larger than the constant current supplied by the transistor TP3 is discharged from the bit line and outputs a detection result to a node SENSE.
Public/Granted literature
- US20150228350A1 CURRENT DETECTION CIRCUIT AND SEMICONDUCTOR MEMORY APPARATUS Public/Granted day:2015-08-13
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