发明授权
- 专利标题： Gate electrodes with notches and methods for forming the same
- 专利标题（中）： 具有凹口的栅电极及其形成方法
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申请号： US13474512申请日： 2012-05-17
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公开(公告)号： US09263272B2公开(公告)日： 2016-02-16
- 发明人: Min-Feng Kao , Szu-Ying Chen , Dun-Nian Yaung , Jen-Cheng Liu , Tzu-Hsuan Hsu , Feng-Chi Hung
- 申请人： Min-Feng Kao , Szu-Ying Chen , Dun-Nian Yaung , Jen-Cheng Liu , Tzu-Hsuan Hsu , Feng-Chi Hung
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/02
- IPC分类号： H01L29/02 ; H01L21/265 ; H01L21/28 ; H01L29/423 ; H01L23/544 ; H01L27/146 ; H01L21/762 ; H01L29/66 ; H01L29/78
摘要：
A device includes a semiconductor substrate, and a Device Isolation (DI) region extending from a top surface of the semiconductor substrate into the semiconductor substrate. A gate dielectric is disposed over an active region of the semiconductor substrate, wherein the gate dielectric extends over the DI region. A gate electrode is disposed over the gate dielectric, wherein a notch of the gate electrode overlaps a portion of the DI region.
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