发明授权
US09263308B2 Water soluble mask for substrate dicing by laser and plasma etch
有权
用于通过激光和等离子体蚀刻进行衬底切割的水溶性掩模
- 专利标题： Water soluble mask for substrate dicing by laser and plasma etch
- 专利标题（中）： 用于通过激光和等离子体蚀刻进行衬底切割的水溶性掩模
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申请号： US14190024申请日： 2014-02-25
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公开(公告)号： US09263308B2公开(公告)日： 2016-02-16
- 发明人: Wei-Sheng Lei , Saravjeet Singh , Madhava Rao Yalamanchili , Brad Eaton , Ajay Kumar
- 申请人： Wei-Sheng Lei , Saravjeet Singh , Madhava Rao Yalamanchili , Brad Eaton , Ajay Kumar
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/67 ; H01L21/78 ; H01L21/3065 ; H01L21/308 ; H01L21/683 ; B23K26/06 ; B23K26/36 ; B23K26/40
摘要：
Methods of dicing substrates having a plurality of ICs are disclosed. A method includes forming a mask comprising a water soluble material layer over the semiconductor substrate. The mask is patterned with a femtosecond laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is then etched through the gaps in the patterned mask to singulate the IC and the water soluble material layer is washed off.
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