Invention Grant
- Patent Title: Semiconductor process for modifying shape of recess
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Application No.: US14723447Application Date: 2015-05-27
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Publication No.: US09263579B2Publication Date: 2016-02-16
- Inventor: Ming-Hua Chang , Chun-Yuan Wu , Chin-Cheng Chien , Tien-Wei Yu , Yu-Shu Lin , Szu-Hao Lai
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/02 ; H01L21/30 ; H01L29/66 ; H01L29/165 ; H01L21/306 ; H01L21/324 ; H01L29/08 ; H01L29/161
Abstract:
A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface.
Public/Granted literature
- US20150263170A1 SEMICONDUCTOR PROCESS FOR MODIFYING SHAPE OF RECESS Public/Granted day:2015-09-17
Information query
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