发明授权
- 专利标题: Successive deposition apparatus and successive deposition method
- 专利标题(中): 连续沉积装置和连续沉积方法
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申请号: US13418837申请日: 2012-03-13
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公开(公告)号: US09263705B2公开(公告)日: 2016-02-16
- 发明人: Satoshi Seo , Hisao Ikeda , Manabu Niboshi , Katsunori Mitsuhashi , Seiichi Mitsui , Yoshitaka Yamamoto
- 申请人: Satoshi Seo , Hisao Ikeda , Manabu Niboshi , Katsunori Mitsuhashi , Seiichi Mitsui , Yoshitaka Yamamoto
- 申请人地址: JP JP
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- 当前专利权人地址: JP JP
- 代理机构: Husch Blackwell LLP
- 优先权: JP2011-055533 20110314; JP2011-055534 20110314
- 主分类号: H01L51/00
- IPC分类号: H01L51/00 ; H01L51/56 ; H05B33/10 ; H01J9/22 ; C09K11/06 ; H01L51/50
摘要:
A successive deposition apparatus by which a reduction in the luminous efficiency of a light-emitting element can be suppressed even in high-speed deposition of a light-emitting layer thereof is provided. The apparatus includes: a second deposition chamber; a third deposition chamber coupled to the second deposition chamber; a transfer unit for transferring a substrate from second deposition chamber to third deposition chamber; plural third deposition sources arranged in the substrate transfer direction in the second deposition chamber; and a fourth and fifth deposition sources alternately arranged in the transfer direction in the third deposition chamber. In the third deposition chamber, the fourth deposition source is placed nearest to the second deposition source. The fourth deposition source contains a host material, and the fifth deposition source contains a dopant material. The HOMO level of a material of the third deposition source is adjusted to that of the host material.
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