Invention Grant
US09264045B2 Buffer circuit with reduced static leakage through controlled body biasing in FDSOI technology
有权
缓冲电路通过FDSOI技术的受控体偏置降低静电泄漏
- Patent Title: Buffer circuit with reduced static leakage through controlled body biasing in FDSOI technology
- Patent Title (中): 缓冲电路通过FDSOI技术的受控体偏置降低静电泄漏
-
Application No.: US14231939Application Date: 2014-04-01
-
Publication No.: US09264045B2Publication Date: 2016-02-16
- Inventor: Sameer Vashishtha , Saiyid Mohammad Irshad Rizvi
- Applicant: STMicroelectronics International N.V.
- Applicant Address: NL Amsterdam
- Assignee: STMicroelectronics International N.V.
- Current Assignee: STMicroelectronics International N.V.
- Current Assignee Address: NL Amsterdam
- Agency: Gardere Wynne Sewell LLP
- Main IPC: H03K5/08
- IPC: H03K5/08 ; H03K19/0948 ; H03K19/003 ; H03K19/0185 ; H03K19/00

Abstract:
A buffer includes an input configured to receive a first digital signal having first and second logic states referenced, respectively, to a first high voltage and a first low voltage of a first supply domain. A first inverter circuit includes a pMOS transistor and nMOS transistor having gate terminals connected to the input. A second inverter is connected in series with the output of the first inverter. The second inverter has an output configured to generate a second digital signal having first and second logic states referenced, respectively, to a second high voltage and a second low voltage of a second, different, supply domain, wherein at least the second high voltage is greater than the first high voltage. A feedback circuit is configured to apply the second digital signal as a bias to a transistor body of the p-MOS transistor of the first inverter circuit.
Public/Granted literature
- US20150280716A1 BUFFER CIRCUIT WITH REDUCED STATIC LEAKAGE THROUGH CONTROLLED BODY BIASING IN FDSOI TECHNOLOGY Public/Granted day:2015-10-01
Information query
IPC分类: