Invention Grant
US09264045B2 Buffer circuit with reduced static leakage through controlled body biasing in FDSOI technology 有权
缓冲电路通过FDSOI技术的受控体偏置降低静电泄漏

Buffer circuit with reduced static leakage through controlled body biasing in FDSOI technology
Abstract:
A buffer includes an input configured to receive a first digital signal having first and second logic states referenced, respectively, to a first high voltage and a first low voltage of a first supply domain. A first inverter circuit includes a pMOS transistor and nMOS transistor having gate terminals connected to the input. A second inverter is connected in series with the output of the first inverter. The second inverter has an output configured to generate a second digital signal having first and second logic states referenced, respectively, to a second high voltage and a second low voltage of a second, different, supply domain, wherein at least the second high voltage is greater than the first high voltage. A feedback circuit is configured to apply the second digital signal as a bias to a transistor body of the p-MOS transistor of the first inverter circuit.
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