Invention Grant
- Patent Title: Semiconductor device and method of manufacture thereof
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Application No.: US14180146Application Date: 2014-02-13
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Publication No.: US09269654B2Publication Date: 2016-02-23
- Inventor: Stefan Willkofer , Uwe Wahl , Bernhard Knott , Markus Hammer , Andreas Strasser
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01F5/00
- IPC: H01F5/00 ; H01F27/28 ; H01L23/495 ; H01L23/48 ; H01L23/522 ; H01L25/065 ; H01L49/02 ; H01L23/64 ; H01L23/00 ; H01F17/00
Abstract:
A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.
Public/Granted literature
- US20140159220A1 Semiconductor Device and Method of Manufacture Thereof Public/Granted day:2014-06-12
Information query
