Some implementations provide a semiconductor device that includes a substrate coupled to a die through a thermal compression bonding process. The semiconductor device also includes a trace coupled to the substrate. The trace includes a first conductive material having a first oxidation property. The trace also includes a first surface layer including a second conductive material having a second oxidation property. The second oxidation property is less susceptible to oxidation than the first oxidation property. The first and second conductive materials are configured to provide an electrical path between the die and the substrate. The first surface layer has a thickness that is 0.3 microns (μm) or less.