发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US13606542申请日： 2012-09-07
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公开(公告)号： US09269782B2公开(公告)日： 2016-02-23
- 发明人: Masahito Kanamura , Toyoo Miyajima , Toshihiro Ohki
- 申请人： Masahito Kanamura , Toyoo Miyajima , Toshihiro Ohki
- 申请人地址： JP Kawasaki
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki
- 代理机构： Kratz, Quintos & Hanson, LLP
- 优先权： JP2011-211561 20110927
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L29/66 ; H01L29/778 ; H01L29/20 ; H03F1/32 ; H01L21/28
摘要：
A semiconductor device, comprising: a first semiconductor layer disposed on a substrate; a second semiconductor layer disposed on the first semiconductor layer; a lower insulating film disposed on the second semiconductor layer; a p-type electroconductive oxide film disposed on the lower insulating film; an upper insulating film disposed on the oxide film; and a gate electrode disposed on the upper insulating film, wherein the lower insulating film under the gate electrode has a depressed portion.
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