Invention Grant
US09269850B2 Method and apparatus for forming copper(Cu) or antimony(Sb) doped zinc telluride and cadmium zinc telluride layers in a photovoltaic device
有权
在光伏器件中形成铜（Cu）或锑（Sb）掺杂的碲化锌和碲化锌碲化物层的方法和装置
- Patent Title: Method and apparatus for forming copper(Cu) or antimony(Sb) doped zinc telluride and cadmium zinc telluride layers in a photovoltaic device
- Patent Title (中): 在光伏器件中形成铜（Cu）或锑（Sb）掺杂的碲化锌和碲化锌碲化物层的方法和装置
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Application No.: US14136630Application Date: 2013-12-20
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Publication No.: US09269850B2Publication Date: 2016-02-23
- Inventor: Long Cheng , Pawel Mrozek
- Applicant: First Solar, Inc.
- Applicant Address: US OH Perrysburg
- Assignee: First Solar, Inc.
- Current Assignee: First Solar, Inc.
- Current Assignee Address: US OH Perrysburg
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L21/02 ; C25D7/12
Abstract:
A method and apparatus for an amount of Cu or Sb dopant incorporated into a zinc-based layer as the layer is being formed. The layer is formed over a coated substrate using an electrochemical deposition (ECD) process. In the ECD process, the bias voltage and plating solution composition may be systematically changed during the electrochemical deposition process to change the amount of Cu or Sb dopant incorporated into the plated layer.
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