Invention Grant
- Patent Title: Memory cells, methods of fabrication, and semiconductor devices
- Patent Title (中): 存储单元，制造方法和半导体器件
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Application No.: US14256655Application Date: 2014-04-18
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Publication No.: US09269888B2Publication Date: 2016-02-23
- Inventor: Roy E. Meade , Sumeet C. Pandey , Gurtej S. Sandhu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/02 ; H01L43/10 ; H01L43/12 ; H01L27/22
Abstract:
A magnetic cell includes a magnetic tunnel junction that comprises magnetic and nonmagnetic materials exhibiting hexagonal crystal structures. The hexagonal crystal structure is enabled by a seed material, proximate to the magnetic tunnel junction, that exhibits a hexagonal crystal structure matching the hexagonal crystal structure of the adjoining magnetic material of the magnetic tunnel junction. In some embodiments, the seed material is formed adjacent to an amorphous foundation material that enables the seed material to be formed at the hexagonal crystal structure. In some embodiments, the magnetic cell includes hexagonal cobalt (h-Co) free and fixed regions and a hexagonal boron nitride (h-BN) tunnel barrier region with a hexagonal zinc (h-Zn) seed region adjacent the h-Co. The structure of the magnetic cell enables high tunnel magnetoresistance, high magnetic anisotropy strength, and low damping. Methods of fabrication and semiconductor devices are also disclosed.
Public/Granted literature
- US20150303372A1 MEMORY CELLS, METHODS OF FABRICATION, AND SEMICONDUCTOR DEVICES Public/Granted day:2015-10-22
Information query
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