发明授权
US09269890B2 Magnetoresistance effect element with shift canceling layer having pattern area greater than that of storage layer
有权
磁阻效应元件具有移位消除层，其图案面积大于存储层的图案面积
- 专利标题： Magnetoresistance effect element with shift canceling layer having pattern area greater than that of storage layer
- 专利标题（中）： 磁阻效应元件具有移位消除层，其图案面积大于存储层的图案面积
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申请号： US14014210申请日： 2013-08-29
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公开(公告)号： US09269890B2公开(公告)日： 2016-02-23
- 发明人: Masahiko Nakayama , Toshihiko Nagase , Tadashi Kai , Youngmin Eeh , Koji Ueda , Yutaka Hashimoto , Daisuke Watanabe , Kazuya Sawada
- 申请人： Masahiko Nakayama , Toshihiko Nagase , Tadashi Kai , Youngmin Eeh , Koji Ueda , Yutaka Hashimoto , Daisuke Watanabe , Kazuya Sawada
- 代理机构： Holtz, Holtz & Volek PC
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; H01L43/08 ; H01F10/32 ; H01F41/32
摘要：
According to one embodiment, a magnetoresistance effect element includes a reference layer, a shift canceling layer, a storage layer provided between the reference layer and the shift canceling layer, a tunnel barrier layer provided between the reference layer and the storage layer, and a spacer layer provided between the shift canceling layer and the storage layer, wherein a pattern of the storage layer is provided inside a pattern of the shift canceling layer when the patterns of the storage layer and the shift canceling layer are viewed from a direction perpendicular to the patterns of the storage layer and the shift canceling layer.
公开/授权文献
- US20140284735A1 MAGNETORESISTANCE EFFECT ELEMENT 公开/授权日：2014-09-25