Invention Grant
- Patent Title: Methods of depositing phase change materials and methods of forming memory
- Patent Title (中): 沉积相变材料的方法和形成记忆的方法
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Application No.: US14313850Application Date: 2014-06-24
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Publication No.: US09269900B2Publication Date: 2016-02-23
- Inventor: Eugene P. Marsh , Timothy A. Quick , Stefan Uhlenbrock
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L45/00
- IPC: H01L45/00 ; C23C16/28 ; C23C16/30 ; C23C16/455
Abstract:
A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.
Public/Granted literature
- US20140308776A1 Methods of Forming Phase Change Materials and Methods of Forming Phase Change Memory Circuitry Public/Granted day:2014-10-16
Information query
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