Invention Grant
- Patent Title: Semiconductor memory with threshold current setting circuit
- Patent Title (中): 具有阈值电流设定电路的半导体存储器
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Application No.: US14063747Application Date: 2013-10-25
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Publication No.: US09270237B2Publication Date: 2016-02-23
- Inventor: Hitoshi Imai , Hirotatsu Tanaka
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2012-238045 20121029
- Main IPC: H03F3/08
- IPC: H03F3/08 ; H04N1/00

Abstract:
A semiconductor device includes a first trans-impedance amplifier, a second trans-impedance amplifier, a peak hold circuit, a comparator and a threshold current setting circuit. The first trans-impedance amplifier converts a first current signal generated by a first photodiode, into which an optical signal is input, into a first voltage signal. The second trans-impedance amplifier converts a second current signal generated by a second photodiode, to which an optical signal is blocked, into a second voltage signal. The peak hold circuit holds the peak value of the first voltage signal. The comparator outputs a pulse on the basis of the first and second voltage signals. The threshold current setting circuit draws out a threshold current.
Public/Granted literature
- US20140117212A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-05-01
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