Invention Grant
- Patent Title: Phase change memory with switch (PCMS) write error detection
- Patent Title (中): 具有开关(PCMS)的相变存储器写入错误检测
-
Application No.: US13997246Application Date: 2011-12-30
-
Publication No.: US09274885B2Publication Date: 2016-03-01
- Inventor: Shekoufeh Qawami , Rajesh Sundaram
- Applicant: Shekoufeh Qawami , Rajesh Sundaram
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Alpine Technology Law Group LLC
- International Application: PCT/US2011/068139 WO 20111230
- International Announcement: WO2013/101196 WO 20130704
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10 ; G06F11/07 ; G11C13/00

Abstract:
Methods and apparatus related to PCMS (Phase Change Memory with Switch) write error detection are described. In one embodiment, a first storage unit stores a single bit to indicate whether an error corresponding to a write operation in any of one or more PCMS devices has occurred. Also, one or more storage units each store a plurality of bits to indicate whether the error corresponding to the write operation has occurred in a partition of a plurality of partitions of the one or more PCMS devices. Other embodiments are also disclosed and claimed.
Public/Granted literature
- US20140317474A1 PHASE CHANGE MEMORY WITH SWITCH (PCMS) WRITE ERROR DETECTION Public/Granted day:2014-10-23
Information query