A programming method includes a first program loop applying first and second pulses to a selected word line and thereafter determining a threshold voltage for the selected memory cell in relation to first and second verification voltages. Then, upon determining that the threshold voltage is lower than the first verification voltage, performing the second program loop by applying the first pulse to the selected word line, or upon determining that the threshold voltage is higher than the first verification voltage and lower than the second verification voltage, performing the second program loop by applying the second pulse to the selected word line.