NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD
    1.
    发明申请
    NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD 有权
    非易失性存储器件和程序方法

    公开(公告)号:US20150078093A1

    公开(公告)日:2015-03-19

    申请号:US14476123

    申请日:2014-09-03

    CPC classification number: G11C16/3459 G11C11/5628 G11C16/0483

    Abstract: A programming method includes a first program loop applying first and second pulses to a selected word line and thereafter determining a threshold voltage for the selected memory cell in relation to first and second verification voltages. Then, upon determining that the threshold voltage is lower than the first verification voltage, performing the second program loop by applying the first pulse to the selected word line, or upon determining that the threshold voltage is higher than the first verification voltage and lower than the second verification voltage, performing the second program loop by applying the second pulse to the selected word line.

    Abstract translation: 编程方法包括将第一和第二脉冲施加到所选字线的第一程序循环,然后相对于第一和第二验证电压确定所选择的存储器单元的阈值电压。 然后,当确定阈值电压低于第一验证电压时,通过将第一脉冲施加到所选择的字线,或者在确定阈值电压高于第一验证电压并低于第一验证电压 第二验证电压,通过将第二脉冲施加到所选择的字线来执行第二程序循环。

    Nonvolatile memory device and program method
    2.
    发明授权
    Nonvolatile memory device and program method 有权
    非易失性存储器件和程序方法

    公开(公告)号:US09275751B2

    公开(公告)日:2016-03-01

    申请号:US14476123

    申请日:2014-09-03

    CPC classification number: G11C16/3459 G11C11/5628 G11C16/0483

    Abstract: A programming method includes a first program loop applying first and second pulses to a selected word line and thereafter determining a threshold voltage for the selected memory cell in relation to first and second verification voltages. Then, upon determining that the threshold voltage is lower than the first verification voltage, performing the second program loop by applying the first pulse to the selected word line, or upon determining that the threshold voltage is higher than the first verification voltage and lower than the second verification voltage, performing the second program loop by applying the second pulse to the selected word line.

    Abstract translation: 编程方法包括将第一和第二脉冲施加到所选字线的第一程序循环,然后相对于第一和第二验证电压确定所选择的存储器单元的阈值电压。 然后,当确定阈值电压低于第一验证电压时,通过将第一脉冲施加到所选择的字线,或者在确定阈值电压高于第一验证电压并低于第一验证电压 第二验证电压,通过将第二脉冲施加到所选择的字线来执行第二程序循环。

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