Invention Grant
- Patent Title: Gas cluster reactor for anisotropic film growth
- Patent Title (中): 用于各向异性膜生长的气体簇反应器
-
Application No.: US14277857Application Date: 2014-05-15
-
Publication No.: US09275866B2Publication Date: 2016-03-01
- Inventor: Oleg Gluschenkov , Ahmet S. Ozcan
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent L. Jeffrey Kelly; Steven Meyers
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/285 ; H01J37/305 ; H01J37/30 ; H01L21/02 ; H01L21/3205 ; C23C14/02
Abstract:
A method of forming a low temperature silicide film on a substrate includes supplying a source gas to a cluster formation chamber to form a gas cluster that is subsequently moved to an ionization-acceleration chamber to form a gas cluster ion beam (GCIB). The GCIB is injected into a processing chamber containing the substrate. A precursor gas is injected through an injection device located on a top portion of the processing chamber to form a silicide film on the substrate by bombarding the substrate with the GCIB in the presence of the precursor gas.
Public/Granted literature
- US20150332927A1 GAS CLUSTER REACTOR FOR ANISOTROPIC FILM GROWTH Public/Granted day:2015-11-19
Information query
IPC分类:
