Invention Grant
US09275874B2 Methods for fabricating integrated circuits using chemical mechanical planarization to recess metal
有权
使用化学机械平面化制造集成电路以使金属凹陷的方法
- Patent Title: Methods for fabricating integrated circuits using chemical mechanical planarization to recess metal
- Patent Title (中): 使用化学机械平面化制造集成电路以使金属凹陷的方法
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Application No.: US14015640Application Date: 2013-08-30
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Publication No.: US09275874B2Publication Date: 2016-03-01
- Inventor: Kunaljeet Tanwar , Xunyuan Zhang , Donald Canaperi , Raghuveer Patlolla
- Applicant: GLOBALFOUNDRIES, Inc. , International Business Machines Corporation
- Applicant Address: KY Grand Cayman US NY Armonk
- Assignee: GLOBALFOUNDRIES, INC.,INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: GLOBALFOUNDRIES, INC.,INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: KY Grand Cayman US NY Armonk
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01L21/321
Abstract:
Methods for fabricating integrated circuits using chemical mechanical planarization (CMP) for recessing metal are provided. In an embodiment, a method for fabricating an integrated circuit includes filling a trench with a metal and forming an overburden portion of the metal outside of the trench. The method further includes performing a planarization process with an etching slurry to remove the overburden portion of the metal and to recess the metal within the trench.
Public/Granted literature
- US20150064903A1 METHODS FOR FABRICATING INTEGRATED CIRCUITS USING CHEMICAL MECHANICAL PLANARIZATION TO RECESS METAL Public/Granted day:2015-03-05
Information query
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