Invention Grant
- Patent Title: Method of high temperature layer transfer
- Patent Title (中): 高温层转移方法
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Application No.: US13990539Application Date: 2011-11-23
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Publication No.: US09275892B2Publication Date: 2016-03-01
- Inventor: Nicolas Daix , Konstantin Bourdelle
- Applicant: Nicolas Daix , Konstantin Bourdelle
- Applicant Address: FR Bernin
- Assignee: SOITEC
- Current Assignee: SOITEC
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Priority: FR1059903 20101130
- International Application: PCT/EP2011/070756 WO 20111123
- International Announcement: WO2012/072459 WO 20120607
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46 ; H01L21/762

Abstract:
A method of transferring a layer from a donor substrate onto a receiving substrate comprises ionic implantation of at least one species into the donor substrate and forming a layer of concentration of the species intended to form microcavities or platelets; bonding the donor substrate with the receiving substrate by wafer bonding; and splitting at high temperature to split the layer in contact with the receiving substrate by cleavage, at a predetermined cleavage temperature, at the layer of microcavities or platelets formed in the donor substrate. The method further comprises, after the first implantation step and before the splitting step, ionic implantation of silicon ions into the donor substrate to form a layer of concentration of silicon ions in the donor substrate, the layer of concentration of silicon ions at least partially overlapping the layer of concentration of the species intended to form microcavities or platelets.
Public/Granted literature
- US20130302970A1 A METHOD OF HIGH TEMPERATURE LAYER TRANSFER Public/Granted day:2013-11-14
Information query
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