公开(公告)号：US20130302970A1

公开(公告)日：2013-11-14

申请号：US13990539

申请日：2011-11-23

Applicant: Nicolas Daix ,  Konstantin Bourdelle

Inventor： Nicolas Daix ,  Konstantin Bourdelle

IPC: H01L21/762

CPC classification number: H01L21/76254

Abstract: A method of transferring a layer from a donor substrate onto a receiving substrate comprises ionic implantation of at least one species into the donor substrate and forming a layer of concentration of the species intended to form microcavities or platelets; bonding the donor substrate with the receiving substrate by wafer bonding; and splitting at high temperature to split the layer in contact with the receiving substrate by cleavage, at a predetermined cleavage temperature, at the layer of microcavities or platelets formed in the donor substrate. The method further comprises, after the first implantation step and before the splitting step, ionic implantation of silicon ions into the donor substrate to form a layer of concentration of silicon ions in the donor substrate, the layer of concentration of silicon ions at least partially overlapping the layer of concentration of the species intended to form microcavities or platelets.

Abstract translation: 将一层从供体衬底转移到接收衬底上的方法包括将至少一种物质离子注入供体底物并形成旨在形成微腔或血小板的物质浓度层; 通过晶片接合将施主衬底与接收衬底结合; 并在高温下分裂，以在预定的切割温度下，在形成于供体底物中的微腔或血小板层处切割以分离接触基底的层。 该方法还包括在第一注入步骤之后并且在分离步骤之前，将硅离子离子注入供体衬底以在供体衬底中形成硅离子浓度层，所述硅离子的浓度层至少部分重叠 旨在形成微腔或血小板的物种的浓度层。

公开(公告)号：US09275892B2

公开(公告)日：2016-03-01

申请号：US13990539

申请日：2011-11-23

Applicant: Nicolas Daix ,  Konstantin Bourdelle

Inventor： Nicolas Daix ,  Konstantin Bourdelle

IPC: H01L21/30 ,  H01L21/46 ,  H01L21/762

CPC classification number: H01L21/76254

Abstract: A method of transferring a layer from a donor substrate onto a receiving substrate comprises ionic implantation of at least one species into the donor substrate and forming a layer of concentration of the species intended to form microcavities or platelets; bonding the donor substrate with the receiving substrate by wafer bonding; and splitting at high temperature to split the layer in contact with the receiving substrate by cleavage, at a predetermined cleavage temperature, at the layer of microcavities or platelets formed in the donor substrate. The method further comprises, after the first implantation step and before the splitting step, ionic implantation of silicon ions into the donor substrate to form a layer of concentration of silicon ions in the donor substrate, the layer of concentration of silicon ions at least partially overlapping the layer of concentration of the species intended to form microcavities or platelets.

Abstract translation: 将一层从供体衬底转移到接收衬底上的方法包括将至少一种物质离子注入供体底物并形成旨在形成微腔或血小板的物质浓度层; 通过晶片接合将施主衬底与接收衬底结合; 并在高温下分裂，以在预定的切割温度下，在形成于供体底物中的微腔或血小板层处切割以分离接触基底的层。 该方法还包括在第一注入步骤之后并且在分离步骤之前，将硅离子离子注入供体衬底以在供体衬底中形成硅离子浓度层，所述硅离子的浓度层至少部分重叠 旨在形成微腔或血小板的物种的浓度层。