Invention Grant
- Patent Title: Semiconductor component and methods for producing a semiconductor component
- Patent Title (中): 半导体元件及其制造方法
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Application No.: US14166090Application Date: 2014-01-28
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Publication No.: US09275895B2Publication Date: 2016-03-01
- Inventor: Andreas Meiser , Walter Hartner , Hermann Gruber , Dietrich Bonart , Thomas Gross
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/763
- IPC: H01L21/763 ; H01L21/768 ; H01L21/762 ; H01L27/105 ; H01L21/84 ; H01L27/12

Abstract:
A method for producing a semiconductor component with a semiconductor body includes providing a substrate of a first conductivity type. A buried semiconductor layer of a second conductivity type is provided on the substrate. A functional unit semiconductor layer is provided on the buried semiconductor layer. At least one trench, which reaches into the substrate, is formed in the semiconductor body. An insulating layer is formed, which covers inner walls of the trench and electrically insulates the trench interior from the functional unit semiconductor layer and the buried semiconductor layer, the insulating layer having at least one opening in the region of the trench bottom. The at least one trench is filled with an electrically conductive semiconductor material of the first conductivity type, wherein the electrically conductive semiconductor material forms an electrical contact from a surface of the semiconductor body to the substrate.
Public/Granted literature
- US20140141608A1 SEMICONDUCTOR COMPONENT AND METHODS FOR PRODUCING A SEMICONDUCTOR COMPONENT Public/Granted day:2014-05-22
Information query
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