Invention Grant
- Patent Title: Semiconductor devices and methods of manufacturing the same
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US14208108Application Date: 2014-03-13
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Publication No.: US09276003B2Publication Date: 2016-03-01
- Inventor: Jea-Hyun Kim , Kyong-Seok Song , Sung-Hee Han
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, PA
- Priority: KR10-2013-0027696 20130315
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/762 ; H01L27/02

Abstract:
A semiconductor device includes a substrate with an active pattern, the active pattern having a first extension portion extending in a first direction substantially parallel to a top surface of the substrate, a second extension portion extending from a first end of the first extension portion in a third direction oriented obliquely to the first direction, a third extension portion extending from a second end of the first extension portion in a direction opposed to the third direction, a first projection portion protruding from the second extension portion in a direction opposed to the first direction, the first projection portion being spaced apart from the first extension portion, and a second projection portion protruding from the third extension portion in the first direction, the second projection portion being spaced apart from the first extension portion.
Public/Granted literature
- US20140264727A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2014-09-18
Information query
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