Semiconductor devices and methods of manufacturing the same
    1.
    发明授权
    Semiconductor devices and methods of manufacturing the same 有权
    半导体器件及其制造方法

    公开(公告)号:US09276003B2

    公开(公告)日:2016-03-01

    申请号:US14208108

    申请日:2014-03-13

    Abstract: A semiconductor device includes a substrate with an active pattern, the active pattern having a first extension portion extending in a first direction substantially parallel to a top surface of the substrate, a second extension portion extending from a first end of the first extension portion in a third direction oriented obliquely to the first direction, a third extension portion extending from a second end of the first extension portion in a direction opposed to the third direction, a first projection portion protruding from the second extension portion in a direction opposed to the first direction, the first projection portion being spaced apart from the first extension portion, and a second projection portion protruding from the third extension portion in the first direction, the second projection portion being spaced apart from the first extension portion.

    Abstract translation: 半导体器件包括具有有源图案的衬底,所述有源图案具有沿着基本上平行于所述衬底的顶表面的第一方向延伸的第一延伸部分,从所述第一延伸部分的第一端部延伸的第二延伸部分 第三方向与第一方向倾斜地定向,第三延伸部分从第一延伸部分的第二端部沿与第三方向相反的方向延伸;第一突出部分,从与第一方向相反的方向从第二延伸部分突出; 所述第一突起部分与所述第一延伸部分间隔开,所述第二突出部分在所述第一方向上从所述第三延伸部分突出,所述第二突出部分与所述第一延伸部分间隔开。

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