A method for manufacturing a light-emitting device is provided, including: providing a base, which includes a heat dissipation layer made of graphene; forming a buffer layer on the heat dissipation layer; and forming a light emission unit on the buffer layer. The light-emitting device so made includes a graphene-made heat dissipation layer that effectively dissipates away heat emitting from an emissive layer of the light emission unit so as to effectively reduce the temperature of the light-emitting device and extend the service life of the light-emitting device. Particularly, when the light-emitting device is a light-emitting diode, the emissive layer thereof is a quantum dot emissive layer for effectively improving color saturation of the light-emitting diode and enhancing color displaying performance of the light-emitting diode.