发明授权
- 专利标题: Multi-level store merging in a cache and memory hierarchy
- 专利标题(中): 多级存储合并在缓存和内存层次结构中
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申请号: US13478100申请日: 2012-05-22
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公开(公告)号: US09280479B1公开(公告)日: 2016-03-08
- 发明人: David A. Kruckemyer , John Gregory Favor , Matthew W. Ashcraft
- 申请人: David A. Kruckemyer , John Gregory Favor , Matthew W. Ashcraft
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Micro Circuits Corporation
- 当前专利权人: Applied Micro Circuits Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Amin, Turocy & Watson, LLP
- 主分类号: G06F12/08
- IPC分类号: G06F12/08
摘要:
A memory system having increased throughput is disclosed. Specifically, the memory system includes a first level write combining queue that reduces the number of data transfers between a level one cache and a level two cache. In addition, a second level write merging buffer can further reduce the number of data transfers within the memory system. The first level write combining queue receives data from the level one cache. The second level write merging buffer receives data from the first level write combining queue. The level two cache receives data from both the first level write combining queue and the second level write merging buffer. Specifically, the first level write combining queue combines multiple store transactions from the load store units to associated addresses. In addition, the second level write merging buffer merges data from the first level write combining queue.
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