Invention Grant
US09281048B2 Semiconductor memory device capable of preventing negative bias temperature instability (NBTI) using self refresh information
有权
能够使用自刷新信息来防止负偏压温度不稳定性（NBTI）的半导体存储器件
- Patent Title: Semiconductor memory device capable of preventing negative bias temperature instability (NBTI) using self refresh information
- Patent Title (中): 能够使用自刷新信息来防止负偏压温度不稳定性（NBTI）的半导体存储器件
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Application No.: US14325852Application Date: 2014-07-08
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Publication No.: US09281048B2Publication Date: 2016-03-08
- Inventor: Byung-Chul Kim , Yang-Ki Kim , Seong-Hwan Jeon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2013-0147753 20131129
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/406 ; G11C11/4076 ; G11C11/4067 ; G11C7/04
Abstract:
A semiconductor memory device that includes a command decoder, a refresh controller, an oscillator and a delay unit. The command decoder generates a self refresh command, and the oscillator generates an oscillation signal. The refresh controller generates a refresh control signal and a recovery signal in response to the self refresh command and the oscillation signal. The delay unit transitions internal nodes included in the delay unit that are not transitioned during a refresh period in response to the refresh control signal and the recovery signal.
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